The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Jun. 08, 2023
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Takuho Kamada, Tokyo, JP;

Koji Ogata, Tokyo, JP;

Kiyoyuki Satou, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 12/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 12/038 (2025.01); H10D 62/127 (2025.01);
Abstract

A semiconductor device includes an n-type semiconductor substrate, a trench, and a gate electrode formed in the trench via a gate insulating film. An absolute value of a difference between a thickness of the gate insulating film formed on a corner portion of the trench and a thickness of the gate insulating film formed on the bottom portion of the trench is smaller than an absolute value of a difference between the thickness of the gate insulating film formed on the corner portion of the trench and a thickness of the gate insulating film formed on the sidewall portion of the trench.


Find Patent Forward Citations

Kamada, Takuho. (2026). Semiconductor device and method of manufacturing the same (U.S. Patent No. 12652814). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12652814

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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