The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jan. 17, 2023
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Dong Ik Suh, Gyeonggi-do, KR;
Won Tae Koo, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10D 1/684 (2025.01);
Abstract
A semiconductor device according to an embodiment includes a first electrode and a second electrode that are spaced apart from each other, a capacitor dielectric structure disposed between the first electrode and the second electrode, and a barrier dielectric layer disposed between one of the first and second electrodes and the capacitor dielectric structure. The capacitor dielectric structure may include a ferroelectric layer and a dielectric layer. The barrier dielectric layer may include a ferroelectric material.