The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

May. 19, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Intak Jeon, Suwon-si, KR;

Hanjin Lim, Suwon-si, KR;

Hyungsuk Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/033 (2023.02); H10D 1/68 (2025.01);
Abstract

A semiconductor device includes a lower structure; a lower electrode on the lower structure; an upper electrode covering the lower electrode on the lower structure; and a dielectric structure disposed between the lower electrode and the upper electrode. The dielectric structure includes a first dielectric film including a first material and a second dielectric film including a second material different from the first material. The first dielectric film includes a first surface in contact with or facing the lower electrode and a second surface facing the first surface. The second dielectric film includes a first portion disposed in an opening of the first dielectric film and extending in a direction from the second surface toward the first surface.


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