The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Apr. 09, 2024
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Francesco Pinzin, Varese, IT;

Alessandro Bertolini, Vermiglio, IT;

Alberto Cattani, Cislago, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H02M 1/088 (2006.01); H02M 3/157 (2006.01); H02M 3/158 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H02M 1/088 (2013.01); H02M 3/157 (2013.01); H02M 3/158 (2013.01);
Abstract

A power MOSFET driver circuit includes a feedback circuit configured to supply a feedback signal that signals when a gate voltage of the power MOSFET crosses a plateau value and the power MOSFET switches conduction state. The feedback circuit includes a comparator with a replica MOSFET of the power MOSFET, with scaled down dimensions, whose gate is coupled to the gate electrode of the power MOSFET. A bistable circuit has an input coupled to an output of the replica MOSFET and is configured to change a logic state of the feedback signal following the transition of the switching signal when the gate voltage of the power MOSFET crosses the plateau value and the power MOSFET switches conduction state.


Find Patent Forward Citations

Loading…