The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Sep. 28, 2020
Hitachi High-tech Corporation, Tokyo, JP;
Azusa Konno, Tokyo, JP;
Takashi Shidara, Tokyo, JP;
Ichiro Fujimura, Tokyo, JP;
Daiji Kirihata, Tokyo, JP;
Hiromi Mise, Tokyo, JP;
Hitachi High-Tech Corporation, Tokyo, JP;
Abstract
Depth information of a multilayer structure is acquired quickly and with high accuracy. An analysis system includes (a) acquiring a first captured image of a sample SAM viewed from a first direction by irradiating the sample SAM including a multilayer structure with an electron beam EBfrom the first direction, (b) acquiring a second captured image of the sample SAM viewed from a second direction by irradiating the sample SAM with the electron beam EBfrom the second direction, in which the second direction intersects the first direction, (c) acquiring depth information of the multilayer structure using information of the sample SAM including the first captured image, the second captured image, a number of layers of the multilayer structure, a thickness of one layer or a thickness of each layer of the multilayer structure, and a depth at which a first layer of the multilayer structure starts.