The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Feb. 15, 2023
The Government of the United States As Represented BY the Director, National Security Agency, Ft. George G. Meade, MD (US);
Charles G. Tahan, Kensington, MD (US);
Thomas M. Hazard, Arlington, MA (US);
Andrew J. Kerman, Arlington, MA (US);
Kyle A. Serniak, Somerville, MA (US);
The Government of the United States as represented by the Director, National Security Agency, Ft. George G. Meade, MD (US);
Abstract
A quantum device including superconducting-semiconducting qubits and coupler designs based on high-quality, compact through-silicon vias (TSVs). An interposer probe wafer containing TSVs is used to contact a sample wafer with, for example, a superconductor-proximitized, epitaxially-grown, germanium quantum well. By utilizing the capacitance of the probe wafer TSVs, the majority of the electric field in the qubits is pulled away from lossy regions that are present in the semiconducting wafer. The probe wafer can reduce the qubit's electric field participation in the sample wafer by an order of magnitude for thin substrates and remains small even when the epitaxial layer thickness approachesm. This scheme is extensible to multi-qubit systems that have tunable qubit-qubit couplings without magnetic fields. This approach shrinks the on-chip footprint of voltage-tunable superconducting qubits and is applicable to super-semi heterostructures in a variety of systems.