The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Jan. 26, 2024
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Sungha Choi, Goyang-si, KR;

Jungsoo Lee, Paju, KR;

Jaeseong You, Seoul, KR;

Debasmit Das, San Diego, CA (US);

Munawar Hayat, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 40/20 (2020.01);
U.S. Cl.
CPC ...
G06F 40/20 (2020.01);
Abstract

A processor-implemented method for selective parameter efficient fine-tuning (PEFT) includes receiving a large language model (LLM). The LLM has multiple layers with each layer having a set of parameters. A subset of the parameters are identified to fine-tune for a downstream task based on a score function. An adapter is applied to the identified subset of the parameters to fine-tune. Only the identified subset of the parameters is fine-tuned.


Find Patent Forward Citations

Choi, Sungha. (2026). Selective parameter-efficient fine-tuning for large-scale models (U.S. Patent No. 12651116). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12651116

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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