The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Sep. 29, 2023
Applicant:

Huawei Technologies Co., Ltd., Shenzhen, CN;

Inventors:

Zhen Dong, Dongguan, CN;

Yanbo Li, Dongguan, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/225 (2006.01); G02F 1/21 (2006.01);
U.S. Cl.
CPC ...
G02F 1/2257 (2013.01); G02F 1/212 (2021.01);
Abstract

A PN junction, a method for preparing a PN junction, and a modulator are disclosed. The PN junction includes a slab waveguide layer and a plurality of waveguides. The slab waveguide layer includes P-type doped regions and N-type doped regions, and a carrier-depletion region in a shape of S is formed at a boundary between the two types of regions. Each of the plurality of waveguides arranged at intervals includes a P-type doped region and an N-type doped region, and one carrier-depletion region is formed at a boundary between the two regions. Projections of the P-type doped regions, the N-type doped regions, and the carrier-depletion regions of the plurality of waveguides arranged at intervals on a surface of a slab waveguide region basically coincide with projections of corresponding regions of the slab waveguide layer on the surface of the slab waveguide region.


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