The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Oct. 13, 2022
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
François Templier, Grenoble Cedex, FR;
François Levy, Grenoble Cedex, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H10H 20/01 (2025.01); H10H 20/819 (2025.01); H10H 20/857 (2025.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10H 20/01 (2025.01); H10H 20/819 (2025.01); H10H 20/857 (2025.01);
Abstract
A method of manufacturing an optoelectronic device comprising the successive steps of: a) forming, on an integrated control circuit previously formed inside and on top of a semiconductor substrate, a plurality of inorganic light-emitting diodes including three-dimensional semiconductor elements; and b) depositing an active photosensitive semiconductor layer to fill free spaces laterally extending between the inorganic light-emitting diodes.