The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Mar. 16, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Tomoya Inden, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/43 (2026.01); H10B 80/00 (2023.01); H10W 20/00 (2026.01); H10W 20/40 (2026.01); H10W 20/42 (2026.01); G11C 16/04 (2006.01); H10W 20/44 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/43 (2026.01); H10B 80/00 (2023.02); H10W 20/071 (2026.01); H10W 20/42 (2026.01); H10W 20/496 (2026.01); H10W 20/498 (2026.01); G11C 16/0483 (2013.01); H10W 20/4441 (2026.01); H10W 90/792 (2026.01);
Abstract

A semiconductor device includes a transistor including a first metallic-layer as a gate electrode above a front face of a substrate. A first wiring layer includes first to third elongate members constituted of the same material as the first metallic layer and extending in a first direction, and first and second connecting members constituted of the same material as the first metallic layer, extending in a second direction, and connecting the first to third elongate members. A second wiring layer is provided above the first metallic layer, and includes fourth to sixth elongate members extending in the first or second direction, and third and fourth connecting members constituted of the same material as that of the fourth to sixth elongate members, extending in the other of the first and second directions, and connecting the fourth to sixth elongate members. The first and second wiring layers are connected to each other.


Find Patent Forward Citations

Inden, Tomoya. (2026). Semiconductor device (U.S. Patent No. 12648428). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12648428

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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