The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Dec. 02, 2022
Applicant:

Asm Ip Holding, B.v., Almere, NL;

Inventors:

Shaoren Deng, Ghent, BE;

David Kurt De Roest, Leuven, BE;

Marko Tuominen, Helsinki, FI;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H10P 50/00 (2026.01); H10P 76/40 (2026.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H10P 76/4085 (2026.01); H10P 50/71 (2026.01); H10P 76/405 (2026.01); C23C 16/45529 (2013.01);
Abstract

The disclosure relates to methods of depositing an etch-stop layer on a patterned hard mask is disclosed. The method comprises providing a substrate comprising the patterned hard mask in a reaction chamber, selectively depositing passivation material on the first material; and selectively depositing an etch-stop layer on the on the second material. The patterned hard mask comprises a first material and a second material, and the second material forms partially the surface of the substrate. The disclosure further relates to a semiconductor structure, to a device and to a deposition assembly.


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