The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Feb. 04, 2021
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Shuichi Hiza, Tokyo, JP;

Kunihiko Nishimura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H10P 14/20 (2026.01); H10P 72/70 (2026.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10P 72/7402 (2026.01); H10P 14/3416 (2026.01); H10D 30/015 (2025.01); H10P 72/7434 (2026.01); H10P 72/744 (2026.01);
Abstract

A nitride semiconductor layer formed on a growth substrate is attached to a support substrate via a reversible adhesive layer. Next, the growth substrate is removed, a new substrate is bonded to the exposed nitride semiconductor layer, and subsequently, the reversible adhesive layer and the support substrate are removed. As a result, the nitride semiconductor layer is transferred on the new substrate from the growth substrate. Performed in a step of bonding the nitride semiconductor layer and the new substrate are a step of pressure-contacting the nitride semiconductor layer and the new substrate, a step of softening the reversible adhesive layer, and a step of curing the reversible adhesive layer again.


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