The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Jul. 14, 2021
Applicant:

Screen Holdings Co., Ltd., Kyoto, JP;

Inventors:

Sei Negoro, Kyoto, JP;

Kenji Kobayashi, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/64 (2026.01); C09K 13/00 (2006.01); C09K 13/02 (2006.01); H10P 50/00 (2026.01); H10P 50/20 (2026.01); H10P 50/28 (2026.01); H10P 50/66 (2026.01); H10P 52/00 (2026.01); H10P 95/70 (2026.01);
U.S. Cl.
CPC ...
H10P 50/642 (2026.01); C09K 13/00 (2013.01); C09K 13/02 (2013.01); H10P 50/00 (2026.01); H10P 50/20 (2026.01); H10P 50/283 (2026.01); H10P 50/644 (2026.01); H10P 50/667 (2026.01); H10P 52/00 (2026.01); H10P 95/70 (2026.01);
Abstract

In the present invention, an alkaline first etching liquid is fed to a substrate, whereby an etching target representing a silicon monocrystal and/or polysilicon is etched. An alkaline second etching liquid is fed to the substrate after or before the first etching liquid is fed to the substrate, whereby the etching target is etched, the second etching liquid containing a compound that inhibits contact between hydroxide ions and the etching target, the difference between the maximum value and the minimum value of the etching speed with respect to the (110) face, the (100) face, and the (111) face of silicon being smaller in the second etching liquid than in the first etching liquid, and the maximum value of the etching speed being smaller in the second etching liquid than in the first etching liquid.


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