The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Aug. 22, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sukhwan Chung, Suwon-si, KR;
Zhe Wu, Suwon-si, KR;
Jung Moo Lee, Suwon-si, KR;
Hideki Horii, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); C22C 30/00 (2006.01); H10B 63/00 (2023.01); H10B 63/10 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8828 (2023.02); C22C 30/00 (2013.01); H10B 63/10 (2023.02); H10B 63/24 (2023.02); H10N 70/231 (2023.02);
Abstract
A variable resistance memory device includes a first electrode; a variable resistance material on the first electrode; and a second electrode on the variable resistance material, wherein the variable resistance material includes an impurity (A) and is represented as AGeSbTe, an atomic concentration 'x' of the germanium is 0.4≤x≤0.5, an atomic concentration ‘z’ of the tellurium is 0.3≤z<0.6, an atomic concentration ‘p’ of the impurity is 0<p≤0.1, and an atomic concentration ‘y’ of the antimony is 1−x−z−p and is greater than 0.