The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Nov. 21, 2023
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Heng-Ying Cho, Hsinchu, TW;

Wei-Ting Chang, Hsinchu, TW;

Yi-Hung Lin, Hsinchu, TW;

Assignee:

ENNOSTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/814 (2025.01); H10H 20/82 (2025.01); H10H 20/857 (2025.01); H10H 29/14 (2025.01);
U.S. Cl.
CPC ...
H10H 20/814 (2025.01); H10H 20/82 (2025.01); H10H 20/857 (2025.01); H10H 29/14 (2025.01);
Abstract

A light-emitting device includes a semiconductor stack, an insulating reflective structure having an opening, and an electrode located on the insulating reflective structure and filled in the opening to electrically connect to the semiconductor stack. The semiconductor stack having includes a main surface, and a side surface inclined to the main surface. The light-emitting device has a dominant wavelength and a peak wavelength. The insulating reflective structure includes: a first part located on the main surface and having a first thickness; and a second part located on the side surface and having a second thickness different from the first thickness. The second part of the insulating reflective structure has a reflectivity of more than 90% for the dominant wavelength or the peak wavelength within an incident angle of 0° to 30°.


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