The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Jun. 01, 2022
Navitas Semiconductor Limited, Dublin, IE;
Pil Sung Park, Redondo Beach, CA (US);
Daniel M. Kinzer, El Segundo, CA (US);
Navitas Semiconductor Limited, Dublin, IE;
Abstract
Field plate structures for gallium nitride (GaN) high voltage transistors are disclosed. In one aspect, a transistor includes a GaN substrate, a source region formed on the GaN substrate, a drain region formed on the GaN substrate and separate from the source region, a gate region formed between the source region and the drain region, a pedestal formed on the GaN substrate and positioned between the gate region and the drain region, and a field plate electrically coupled to the source region, where the field plate extends from a proximal region positioned between the source region and the pedestal, towards the drain region, where at least a portion of the field plate overlaps at least a portion of the pedestal.