The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Feb. 09, 2023
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Chin-Chun Huang, Hsinchu County, TW;
Rong He, Shamen City, CN;
Xiang Wang, Shamen City, CN;
You-Di Jhang, New Taipei City, TW;
Hailong Gu, Singapore, SG;
Jinjian Ouyang, Xiamen, CN;
Wen Yi Tan, Xiamen, CN;
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Abstract
The present invention provides a semiconductor device and a method of fabricating the same, which includes a substrate, a gate structure, and a dielectric layer. The gate structure is disposed on the substrate and includes an inverted trapezoidal shape. The dielectric layer is disposed on the substrate, and the gate structure is disposed within the dielectric layer. The gate structure includes a metal gate structure or a polysilicon gate structure.