The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Nov. 18, 2021
Suzhou Oriental Semiconductor Co., Ltd., Jiangsu, CN;
SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Abstract
Provided is a semiconductor power device. The semiconductor power device includes a semiconductor substrate and p-type body regions disposed in the semiconductor substrate. The p-type body regions are in contact with a source metal layer. The semiconductor substrate includes at least one first region, and a region of the semiconductor substrate outside the at least one first region is a second region. A p-type body region of p-type body regions in the first region is provided with a first p-type body region contact region, and the source metal layer is in contact with the first p-type body region contact region to form an ohmic contact. Each of p-type body regions in the second region forms no ohmic contact with the source metal layer.