The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Sep. 22, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kwangsoo Kim, Seoul, KR;
Jinhee Cheon, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
SOGANG UNIVERSITY RESEARCH FOUNDATION, Seoul, KR;
Abstract
A power semiconductor device includes a base semiconductor layer including impurities of a first conductivity type; a body portion provided on the base semiconductor layer and defined by a source trench, the body portion including a gate trench extending inwardly from an upper surface of the body portion; a gate electrode provided in the gate trench; a source electrode provided on the body portion and spaced apart from the gate electrode; and a drain electrode provided below the base semiconductor layer, wherein the body portion includes: a drift layer provided on the base semiconductor layer and including impurities of the first conductivity type; and a pair of shielding regions provided in the drift layer, spaced apart from each other in a horizontal direction, and spaced apart from the base semiconductor layer and the gate trench, the pair of shielding regions including impurities of a second conductivity type different from the first conductivity type.