The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Oct. 25, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dongsung Choi, Suwon-si, KR;
Byongju Kim, Suwon-si, KR;
Wonjun Park, Suwon-si, KR;
Jaemin Jung, Suwon-si, KR;
Changheon Cheon, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A non-volatile memory device includes a substrate, a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers, wherein the plurality of gate electrodes are stacked in a step shape, a channel structure that extends through the mold structure, and a cell contact that extends through the mold structure, the cell contact is connected to a first gate electrode, and the cell contact is not electrically connected to a second gate electrode among the plurality of gate electrodes, wherein the first gate electrode includes: an extension portion; a pad portion having a vertical thickness greater than a vertical thickness of the extension portion; and a connection portion that electrically connects the pad portion to the cell contact, the connection portion has a vertical thickness less than a vertical thickness of the pad portion, and one or more first insulating rings on the connection portion.