The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Oct. 24, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jungmin Ju, Uiwang-si, KR;
Gyuhyun Kil, Hwaseong-si, KR;
Hyebin Choi, Suwon-si, KR;
Doosan Back, Seoul, KR;
Ahrang Choi, Hwaseong-si, KR;
Jung-Hoon Han, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate having first and second active patterns therein, which are spaced apart from each other. The first active pattern has a top surface that is elevated relative to a top surface of the second active pattern. A channel semiconductor layer is provided on the top surface of the first active pattern. A first gate pattern is provided, which includes a first insulating pattern, on the channel semiconductor layer. A second gate pattern is provided, which includes a second insulating pattern having a thickness greater than a thickness of the first insulating pattern, on the top surface of the second active pattern.