The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Sep. 28, 2023
Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventors:

Rei Goto, Osaka, JP;

Hironori Fukuhara, Ibaraki, JP;

Benjamin Paul Abbott, Irvine, CA (US);

Assignee:

Skyworks Solutions, Inc., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/145 (2006.01); H03H 9/64 (2006.01); H04B 1/40 (2015.01);
U.S. Cl.
CPC ...
H03H 9/02559 (2013.01); H03H 9/02574 (2013.01); H03H 9/058 (2013.01); H03H 9/14541 (2013.01); H03H 9/14544 (2013.01); H03H 9/6483 (2013.01); H04B 1/40 (2013.01); H03H 9/02818 (2013.01); H03H 9/02992 (2013.01);
Abstract

An acoustic wave device configured to generate a surface acoustic wave having a wavelength L is disclosed. The acoustic wave device can include a substrate, a piezoelectric layer that includes lithium niobate, an interdigital transducer electrode, an overcoat dielectric layer, and/or a raised frame structure. The piezoelectric layer is disposed at least partially between the substrate and the interdigital transducer electrode. The overcoat dielectric layer is positioned over the interdigital transducer electrode. The raised frame structure is positioned over the overcoat dielectric layer. The raised frame structure includes a material of the overcoat dielectric layer. The raised frame structure is positioned in an edge region within 0.25 L and 0.45 L from an edge of an active region where the surface acoustic wave is generated. The acoustic wave device can include a trap-rich layer over the substrate and an intervening dielectric layer over the trap-rich layer.


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