The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Feb. 24, 2023
Applicants:

Stmicroelectronics (Alps) Sas, Grenoble, FR;

Stmicroelectronics (Grenoble) Sas, Grenoble, FR;

Inventors:

Vratislav Michal, Fontanil-Cornillon, FR;

Nicolas Moeneclaey, Vourey, FR;

Jean-Luc Patry, Crolles, FR;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/08 (2006.01); H03F 1/02 (2006.01); H03F 1/26 (2006.01); H03F 3/45 (2006.01); H03F 3/68 (2006.01);
U.S. Cl.
CPC ...
H03F 3/082 (2013.01); H03F 1/0283 (2013.01); H03F 1/26 (2013.01); H03F 3/45475 (2013.01); H03F 3/68 (2013.01); H03F 2200/129 (2013.01);
Abstract

The present disclosure relates to a device comprising a first transimpedance amplifier comprising a first amplification stage with a first MOS transistor, a second transimpedance amplifier comprising a second amplification stage with a second MOS transistor, and a current source series-connected with the first and second amplification stages, the current source having a first terminal coupled to the drain of the first MOS transistor and a second terminal coupled to the drain of the second MOS transistor.


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