The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Mar. 26, 2024
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Klimentiy Shimanovich, Ramat Gan, IL;

Elazar Kachir, Haifa, IL;

Noam Jungmann, Holon, IL;

Tomer Abraham Cohen, Binyamina, IL;

Bishan He, Poughkeepsie, NY (US);

Rajiv Joshi, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/419 (2006.01); G11C 5/14 (2006.01); G11C 11/418 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 5/14 (2013.01); G11C 11/418 (2013.01);
Abstract

Embodiment herein describe read and write assists for SRAM cells. When performing a write operation, a write assist technique can be performed on the SRAM macro where a word line (WL) for the selected row is boosted to a voltage above the voltage supply. In addition, cell supply voltages for unselected columns are boosted to prevent the boosted WL from flipping bit values in unselected cells. When performing a read operation, a read assist technique can be performed on the SRAM macro, where the Vcell for the selected column is boosted to a voltage above the voltage supply. In another embodiment, the WL for the selected row of the read operation can also be boosted for enhancing the read performance.


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