Read for memory cell with threshold switching selector

Abstract

Technology for reading memory cells in a cross-bar memory array. Each cell has a threshold switching selector in series with a programmable resistance memory element. A current diverting resistor is connected to a selected word line while a read current is driven to the selected word line. Driving the read current to the selected word line causes a voltage across the memory cell to increase until the threshold switching selector switches on. After the threshold switching selector switches on the voltage across the memory cell drops rapidly thereby resulting in a snapback current. Some of the read current is diverted to the current diverting resistor as the voltage across the memory cell increases. When the threshold switching selector switches on the resistor continues to divert current from flowing through the memory cell to prevent excessive current from inadvertently changing the state of the programmable resistance memory element.