The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Mar. 25, 2024
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Min Hye Kang, Icheon-si, KR;

Chang Won Yang, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 7/10 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 7/04 (2013.01); G11C 7/1012 (2013.01); G11C 16/30 (2013.01);
Abstract

A memory device includes a memory cell array including a plurality of memory cells, a temperature sensor configured to measure an internal temperature and generate a temperature compensation code corresponding to the internal temperature, a voltage control circuit configured to generate a conversion temperature code converted from the temperature compensation code, and a voltage generation circuit configured to output a compensation voltage obtained by compensating for a level of a voltage used in an operation on the memory cell array responsive to the conversion temperature code. The temperature sensor and the voltage control circuit are may be located at different positions relative to the memory cell array.


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