Wide bandgap optical phased arrays (opa's) and methods related thereto

Abstract

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from InGaN/AlGaN multiple quantum wells (MQWs) and AlyGa1-yN/AlxGa1-xN (y<x) MQWs. The InGaN/AlGaN MQWs and AlyGa1-yN/AlxGa1-xN (y<x) MQWs include alternating p-type and n-type layers to form p-n-p-n MQW structures to allow the OPA to operate in the reversed biased configuration to further minimize the operating current and heat generation. The phase in each pixel within the OPA will be controlled independently via electro-optic effect in III-nitride MQWs by varying the voltage in each pixel by a Si CMOS array to achieve the manipulation of the distribution of optical power in the far field and steering of the main laser beam. The present disclosure is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.