The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Dec. 08, 2021
Applicant:

Geegah Llc, Ithaca, NY (US);

Inventors:

Amit Lal, Ithaca, NY (US);

Justin Kuo, Ithaca, NY (US);

Assignee:

GEEGAH LLC, Ithaca, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 29/036 (2006.01); A61B 8/00 (2006.01); B06B 1/06 (2006.01); G01N 29/34 (2006.01); H10N 39/00 (2023.01); H10W 40/28 (2026.01);
U.S. Cl.
CPC ...
G01N 29/036 (2013.01); A61B 8/4483 (2013.01); B06B 1/0622 (2013.01); G01N 29/348 (2013.01); H10N 39/00 (2023.02); H10W 40/28 (2026.01); G01N 2291/0237 (2013.01); G01N 2291/0253 (2013.01); G01N 2291/02845 (2013.01);
Abstract

A system for measuring the environment using high-frequency ultrasonic pulses to interrogate thin films on the imaging surface of a CMOS integrated GHz Ultrasonic imager substrate. In one embodiment the device uses a Peltier cooler and heater chip to detect the dew point by the act of moisture condensing on the surface. Integrated temperature measurement is enabled by using some of the pixels, isolated from the environment, to be reflectors that measure the phase change in the reflected signal due to the change in the speed of sound in the silicon substrate. In another embodiment a thin film is exposed to gases, changing its ultrasonic impedance, which can be used to extract the film thickness and its ultrasonic properties.


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