The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Feb. 06, 2020
Amplitude, Pessac, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite DE Bordeaux, Bordeaux, FR;
Eric Audouard, Solignac-sous-Roche, FR;
Guillaume Bonamis, Talence, FR;
Konstantin Mishchick, Bordeaux, FR;
Clemens Honninger, Cestas, FR;
John Lopez, Gradignan, FR;
Inka Manek-Honninger, Cestas, FR;
Eric Mottay, Begles, FR;
AMPLITUDE, Pessac, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
UNIVERSITE DE BORDEAUX, Bordeaux, FR;
Abstract
Disclosed is a method for determining the operational conditions of a method for high-repetition rate femtosecond laser ablation including a first step of determining a set of parameters of a burst of laser pulses adapted to generate an ablation crater in the material, the set of parameters including an intra-burst repetition frequency f between several hundred MHz and 100 GHz, a number N of pulses of the burst of laser pulses equal to a number Nc of heating and ablation pulses, with Nc being defined by the equation Nc=(L·f)/D, where L represents a test depth and D represents a thermal diffusion coefficient of the material to be ablated, with Nc being greater than or equal to 10, a characteristic total fluence FTchar of the burst of pulses and a characteristic fluence per pulse Fchar=FTchar/Nc below an ablation threshold fluence Fs1 of the material by a single laser pulse.