The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

May. 16, 2024
Applicants:

Fasikl Incorporated, Dallas, TX (US);

Hangzhou Fasikl Technology Co., Ltd, Hangzhou, CN;

Inventors:

Wei Wang, Hangzhou, CN;

Baitong Wang, Hangzhou, CN;

Jules Anh Tuan Nguyen, Dallas, TX (US);

Bing Ye, Hangzhou, CN;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61N 1/00 (2006.01); A61N 1/02 (2006.01); A61N 1/36 (2006.01);
U.S. Cl.
CPC ...
A61N 1/025 (2013.01); A61N 1/36021 (2013.01);
Abstract

Disclosed is an H-bridge control circuit for an electro-stimulation therapeutic instrument for neuromodulation. The H-bridge control circuit includes an H-bridge circuit and a constant current source, where the H-bridge circuit includes a first positive channel metal oxide semiconductor (PMOS) transistor, a second PMOS transistor, a first negative channel metal oxide semiconductor (NMOS) transistor and a second NMOS transistor. Corresponding switching diodes are additionally arranged between the first PMOS transistor and a load and between the second PMOS transistor and the load to avoid an influence of safety of the therapeutic instrument by discharging charges during an interval of stimulation; and moreover, a resistance-capacitance (RC) circuit is additionally arranged between the first PMOS transistor, the second PMOS transistor and a control device such that connection and disconnection of the PMOS transistor can be controlled.


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