The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jul. 05, 2022
Xiamen Sanan Optoelectronics Co., Ltd., Fujian, CN;
Shiwei Liu, Fujian, CN;
Gaolin Zheng, Fujian, CN;
Anhe He, Fujian, CN;
Qing Wang, Fujian, CN;
Ling-Yuan Hong, Fujian, CN;
Kang-Wei Peng, Fujian, CN;
Su-Hui Lin, Fujian, CN;
XIAMEN SANAN OPTOELECTRONICS CO., LTD., Fujian, CN;
Abstract
A high-voltage flip-chip semiconductor light-emitting device includes a substrate, at least two semiconductor light-emitting units, an isolation trench, a conducting layer, an isolating layer, a connecting layer, and a Bragg reflection layer. The semiconductor light-emitting units and the conducting layer are sequentially disposed on the substrate. The isolation trench is formed between the semiconductor light-emitting units. The isolating layer partially covers the conducting layer. The connecting layer is disposed on the isolating layer and electrically connects the semiconductor light-emitting units. The Bragg reflection layer covers the connecting layer and the isolating layer.