The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jul. 16, 2024
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Christian Gruber, Finkenstein, AT;
Benjamin Bernard, Woerth, DE;
Tobias Polster, Villach, AT;
Carsten Von Koblinski, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/78 (2013.01); H01L 23/5386 (2013.01);
Abstract
A semiconductor device includes: a semiconductor die having a front side surface, a backside surface opposite the front side surface, and side faces; a backside metallization layer at least partly covering the backside surface of the semiconductor die and projecting laterally outwards beyond the side faces of the semiconductor die; and a protection layer at least partly covering the side faces of the semiconductor die. The backside metallization layer projects laterally outwards beyond the protection layer.