The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Apr. 17, 2023
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventors:

Kuo-Chung Hsu, Kaohsiung City, TW;

En-Jui Li, New Taipei City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H10W 10/00 (2026.01); H10W 10/10 (2026.01); H10W 10/13 (2026.01); H10W 10/17 (2026.01); H10B 10/00 (2023.01); H10B 12/00 (2023.01); H10B 20/25 (2023.01);
U.S. Cl.
CPC ...
H10W 10/014 (2026.01); H10W 10/011 (2026.01); H10W 10/0121 (2026.01); H10W 10/10 (2026.01); H10W 10/13 (2026.01); H10W 10/17 (2026.01); H10B 10/00 (2023.02); H10B 12/00 (2023.02); H10B 20/25 (2023.02);
Abstract

A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate having an active region and a shallow trench isolation (STI) adjacent to the active region of the substrate. The STI includes a charge trapping layer and a liner disposed between the charge trapping layer and the active region of the substrate, wherein the charge trapping layer is doped with an impurity.


Find Patent Forward Citations

Hsu, Kuo-Chung. (2026). Semiconductor device including isolation structure with impurity and method for manufacturing the same (U.S. Patent No. 12642063). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12642063

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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