The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Jan. 19, 2023
Applicants:

Denso Corporation, Kariya-city, JP;

Toyota Jidosha Kabushiki Kaisha, Toyota, JP;

Mirise Technologies Corporation, Nisshin, JP;

Inventors:

Hiroyuki Takahata, Nisshin, JP;

Yuji Nagumo, Nisshin, JP;

Masashi Uecha, Nisshin, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 52/00 (2026.01); H10P 72/70 (2026.01);
U.S. Cl.
CPC ...
H10P 52/00 (2026.01); H10P 72/7402 (2026.01); H10P 72/7416 (2026.01); H10P 72/7422 (2026.01);
Abstract

A manufacturing method of a semiconductor device, includes: preparing a wafer having a first surface on which a plurality of semiconductor elements is formed and to which a support plate is attached through an adhesive; grinding a second surface of the wafer opposite to the first surface in a state where the support plate is attached to the first surface of the wafer; forming a vertical crack inside the wafer and along a boundary between the adjacent semiconductor elements by pressing a scribe wheel against the wafer along the boundary; separating the support plate from the wafer while leaving the adhesive on the first surface of the wafer; cleaving the wafer along the boundary by pressing a breaking bar against the wafer over the adhesive and along the boundary; and removing the adhesive from at least one of the semiconductor elements divided from the wafer by the cleaving.


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