The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Dec. 05, 2022
Applicant:
Spts Technologies Limited, Newport, GB;
Inventors:
Assignee:
SPTS Technologies Limited, Newport, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01J 37/32 (2006.01); H10N 30/082 (2023.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02389 (2013.01); H01L 21/02631 (2013.01); H01L 21/3086 (2013.01); H01L 21/67253 (2013.01); H01L 21/76862 (2013.01); H01J 37/32174 (2013.01); H01L 21/67207 (2013.01); H10N 30/082 (2023.02);
Abstract
An additive-containing aluminium nitride film containing an additive element selected from Sc, Y or Er is plasma etched through a mask for a period of time, t, with a plasma formed in a gaseous atmosphere having an associated gas pressure while an RF bias power is applied to the additive-containing aluminium nitride film. The gas pressure is reduced and/or the RF bias power is increased for a majority of the period of time t, so that the plasma etching becomes less chemical and more physical over a majority of the period of time, t.