The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Aug. 17, 2023
Applicant:

Magnolia White Corporation, Tokyo, JP;

Inventors:

Yoshitaka Ozeki, Tokyo, JP;

Takahiro Takeuchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 39/32 (2026.01); G06V 40/13 (2022.01);
U.S. Cl.
CPC ...
H10K 39/32 (2023.02); G06V 40/1318 (2022.01);
Abstract

A detection apparatus includes: a substrate; photodiodes each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer; transistors provided for the respective photodiodes; an insulating film provided so as to cover the transistors; a first inorganic insulating film provided so as to cover the photodiodes; a first organic insulating film provided on the upper side of the first inorganic insulating film; and an upper conductive layer provided on the upper side of the first organic insulating film and electrically coupled to the photodiode. Each photodiode includes: first regions in each of which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are directly in contact with one another; and a second region in which the p-type semiconductor layer and the i-type semiconductor layer are separate from each other. The adjacent first regions are coupled together by the p-type semiconductor layer.


Find Patent Forward Citations

Loading…