The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Dec. 15, 2023
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Fabio Pieralisi, Aschaffenburg, DE;
Mingwei Zhu, San Jose, CA (US);
Zihao Yang, Cupertino, CA (US);
Liang Zhao, Gilroy, CA (US);
Jeffrey L. Franklin, Santa Cruz, CA (US);
Hou T. Ng, Campbell, CA (US);
Nag Patibandla, Dublin, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/851 (2025.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/841 (2025.01); H10H 20/854 (2025.01); H10H 20/855 (2025.01); H10H 20/857 (2025.01); H10H 29/01 (2025.01); H10H 29/80 (2025.01);
U.S. Cl.
CPC ...
H10H 20/841 (2025.01); H01L 25/0753 (2013.01); H10H 20/01335 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/851 (2025.01); H10H 20/857 (2025.01); H10H 29/8421 (2025.01); H10H 20/018 (2025.01); H10H 20/0364 (2025.01);
Abstract
Exemplary semiconductor structures may include a plurality of LED structures and a backplane layer. Exemplary semiconductor structures may also include a light barrier region positioned between the LED structures and the backplane layer. The light barrier region may be operable to absorb light at wavelengths shorter than or about 300 nm and transmit light at wavelengths greater than or about 350.