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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12641918 B1

PDFFull Text
Date of Patent:
May. 26, 2026

Filed:

Jun. 12, 2020

Doped mixed cation perovskite materials and devices exploiting same

Applicants:

Ivy Mawusi Asuo, Montreal, CA;

Dawit Minale Gedamu, Montreal, CA;

Ibrahima Ka, St. Hubert, CA;

Sylvain Cloutier, Saint-Basile-le-Grand, CA;

Riad Nechache, Montreal, CA;

Alain Pignolet, Montreal, CA;

Inventors:

Ivy Mawusi Asuo, Montreal, CA;

Dawit Minale Gedamu, Montreal, CA;

Ibrahima Ka, St. Hubert, CA;

Sylvain Cloutier, Saint-Basile-le-Grand, CA;

Riad Nechache, Montreal, CA;

Alain Pignolet, Montreal, CA;

Assignee:

SOCOVAR SOCIETÉ EN COMMANDITE, Québec City, CA;

Attorney:

Rosenberg, Klein & Lee

Primary Examiner:

Samuel Park

Int. Cl.
CPC ...
H10K 85/50 (2023.01); C01G 21/00 (2006.01); H10H 20/01 (2025.01); H10K 30/20 (2023.01); H10K 30/40 (2023.01); H10K 30/82 (2023.01); H10K 30/88 (2023.01); H10K 71/13 (2023.01); H10K 71/40 (2023.01); H10K 30/10 (2023.01); H10K 30/15 (2023.01); H10K 30/50 (2023.01);
U.S. Cl.
CPC ...
H10H 20/01 (2025.01); C01G 21/006 (2013.01); H10K 30/20 (2023.02); H10K 30/40 (2023.02); H10K 30/82 (2023.02); H10K 30/88 (2023.02); H10K 71/13 (2023.02); H10K 71/441 (2023.02); H10K 85/50 (2023.02); C01P 2002/34 (2013.01); C01P 2002/52 (2013.01); H10K 30/10 (2023.02); H10K 30/151 (2023.02); H10K 30/50 (2023.02);
Abstract

Organic-inorganic halide perovskite (OIHP) materials through their promising material properties, simple solution processability, low material cost, high photon absorption, carrier mobilities, and tunable band gap are suitable for large area coatings in the fabrication of optical displays, LEDs, photovoltaic cells and photodetectors. However, OIHP stability and shelf life have been limited to date as exposed perovskite films do not survive long in ambient air causing further issues for large scale OIHP based device production and deployment. Accordingly, the inventors have established three-cation material system variants using an innovative single solution thiocyanate (SCN) doped three cation material system allowing tailoring of perovskite grain size and microstructure to minimize degradation from exposure to atmospheric conditions. Further, solvent engineering techniques using the innovative single solution SCN doped three cation material system established by the inventors allow for large area processing, compact OIHP films with large crystal grains (>4 μm), and passivated grain boundaries.

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