The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Nov. 21, 2022
Applicant:
City University of Hong Kong, Kowloon, HK;
Inventors:
Chung Yin Johnny Ho, Shatin, HK;
You Meng, Kowloon, HK;
Zhengxun Lai, Kowloon, HK;
Wei Wang, Kowloon, HK;
Assignee:
City University of Hong Kong, Kowloon, HK;
Primary Examiner:
Int. Cl.
CPC ...
C01G 21/00 (2006.01); H10F 30/21 (2025.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/14 (2025.01);
U.S. Cl.
CPC ...
H10F 77/12 (2025.01); C01G 21/006 (2013.01); H10F 30/21 (2025.01); H10F 71/00 (2025.01); H10F 77/147 (2025.01);
Abstract
A method of fabricating a halide perovskite having a general formula of ABX, wherein A, B, and X are inorganic elements and X is a halide, the method including a vapor-liquid-solid process triggered by a catalyst formed from a noble metal; A nanowire of the halide perovskite and a photoelectronic device thereof.
Ho, Chung Yin Johnny. (2026). Method of fabricating a halide perovskite (U.S. Patent No. 12641909). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12641909
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile