The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Dec. 15, 2022
Applicant:
Lumiode, Inc., Bronx, NY (US);
Inventors:
Brian Tull, New York, NY (US);
Ioannis Kymissis, New York, NY (US);
Israel Ramirez, New York, NY (US);
Vincent Lee, New York, NY (US);
Assignee:
Lumiode, Inc., New York City, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H04N 25/532 (2023.01); H04N 25/77 (2023.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8037 (2025.01); H04N 25/532 (2023.01); H04N 25/77 (2023.01); H10F 39/016 (2025.01); H10F 39/028 (2025.01); H10F 39/18 (2025.01); H10F 39/8057 (2025.01); H10F 39/806 (2025.01); H10F 39/811 (2025.01);
Abstract
An integrated circuit comprises a substrate composed of crystalline semiconductor. An optoelectronic device is formed at the substrate and includes a plurality of transducers. A thin-film semiconductor layer is situated over the optical device, and circuitry is formed at the thin-film semiconductor layer. The circuitry may include a plurality of transistors electrically coupled to the optoelectronic device by a set of layer interconnects.