The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jul. 13, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eui Bok Lee, Suwon-si, KR;
Moon Kyun Song, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a fin-shaped pattern, a field insulating film covering a sidewall of the fin-shaped pattern, a source/drain pattern disposed on an upper surface of the fin-shaped pattern, a source/drain etch stop film extending along an upper surface of the field insulating film and a sidewall of the source/drain pattern, a source/drain contact connected to the source/drain pattern, a buried conductive pattern penetrating through a substrate and connected to the source/drain contact, a portion of the buried conductive pattern being disposed within the field insulating film, and a rear wiring line connected to the buried conductive pattern. The field insulating film includes a first field filling film and a first field stop film. The first field stop film is disposed between the first field filling film and the substrate. The first field stop film includes a material having etch selectivity with respect to the first field filling film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile