The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
May. 29, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Kotaro Kawahara, Tokyo, JP;
Shiro Hino, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A semiconductor device according to the present disclosure includes a sense source electrode provided separately from a source electrode, and diodes. The diodes are provided between the sense source electrode and a drift layer. A turn-on voltage of each diode is lower than an operating voltage of a p-n diode formed of a sense well region and the drift layer or of a dummy sense well region and the drift layer. The diodes allow a current to flow from the sense source electrode toward a drain electrode. The diodes are provided in such a way that they are mixed with facing areas in a dummy sense region in which dummy sense well regions and the diodes are disposed. Each facing area is an area where one of the dummy sense well regions faces one of the gate electrodes via one of the gate insulating films.