The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Mar. 25, 2020
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Alberto Martinez-Limia, Tuebingen, DE;

Alfred Goerlach, Kusterdingen, DE;

Holger Bartolf, Ofterdingen, DE;

Stephan Schwaiger, Bodelshausen, DE;

Wolfgang Feiler, Reutlingen, DE;

Assignee:

ROBERT BOSCH GMBH, Stuttgart, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 30/01 (2025.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01); H10D 84/00 (2025.01); H10P 30/20 (2026.01);
U.S. Cl.
CPC ...
H10D 30/668 (2025.01); H10D 30/0297 (2025.01); H10D 62/8325 (2025.01); H10D 62/8503 (2025.01); H10D 84/146 (2025.01); H10P 30/222 (2026.01);
Abstract

A semiconductor component. The semiconductor component includes a semiconductor substrate that includes a first side, on which an epitaxial layer is situated. On the epitaxial layer, body regions are sectionally situated, and on the body regions, source regions are situated. A plurality of first trenches and a plurality of second trenches extending starting from the source regions into the epitaxial layer. The first trenches have a greater depth than the second trenches. A second trench sectionally extends into a first trench in each case. On a trench surface of the first trenches, a layer including a first doping is situated in each case. The first trenches are filled with a first material including a second doping, the first doping having a higher value than the second doping.


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