The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Mar. 09, 2022
Boe Technology Group Co., Ltd., Beijing, CN;
Fengjuan Liu, Beijing, CN;
Dongfang Wang, Beijing, CN;
Wei Liu, Beijing, CN;
Yuhang Lu, Beijing, CN;
Hongda Sun, Beijing, CN;
Ce Ning, Beijing, CN;
Guangcai Yuan, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
A method for manufacturing a thin film transistor, and a thin film transistor are provided. The method includes: forming an active layer on a substrate by a single patterning process; forming a gate insulating layer by deposition on a side of the active layer away from the substrate; forming a first via hole and a second via hole penetrating through the gate insulating layer by a single patterning process, the first and second via holes being located at two ends of the active layer respectively; and forming a first electrode, a gate electrode, and a second electrode on the gate insulating layer by a single patterning process, the first and second electrodes being connected to the active layer through the first and second via holes, respectively, and an orthographic projection of the gate electrode on the substrate at least partially overlapping that of the active layer on the substrate.