The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Oct. 03, 2022
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Tomohiro Imai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H01L 21/768 (2006.01); H10D 62/60 (2025.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10D 12/421 (2025.01); H10D 12/481 (2025.01); H10D 62/60 (2025.01); H10W 20/069 (2026.01);
Abstract

An interlayer insulating film includes a first insulating film formed on a semiconductor layer and a second insulating film formed on the first insulating film. The first insulating film is a silicon oxide film and the second insulating film is a BPSG film. A thickness of the second insulating film is larger than a thickness of the first insulating film. A contact hole is formed of a first contact hole and a second contact hole. The first contact hole penetrates an emitter region and reaches a base region. The second contact hole is formed in the first insulating film and the second insulating film and communicates with the first contact hole. An opening width of the second contact hole is larger than an opening width of the first contact hole.


Find Patent Forward Citations

Imai, Tomohiro. (2026). Semiconductor device including insulated gate bipolar transistor with contact hole in interlayer insulating film and method of manufacturing the same (U.S. Patent No. 12641808). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12641808

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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