Semiconductor device including channel pattern and method for manufacturing the same

Abstract

A semiconductor device includes: a substrate; a bit line above the substrate; a channel pattern on the bit line extending in a direction perpendicular to an upper surface of the bit line; a word line intersecting the bit line and spaced apart from the channel pattern; a gate insulating pattern between the channel pattern and the word line; an insulating pattern on the word line; and a landing pad connected to the channel pattern. The channel pattern includes first, second, and third channel patterns that are sequentially stacked, the first channel pattern is connected to the bit line, the second channel pattern is between the first channel pattern and the third channel pattern, the third channel pattern is connected to the landing pad, the first channel pattern and the third channel pattern include a crystalline oxide semiconductor material, and the second channel pattern includes an amorphous oxide semiconductor material.