The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Jul. 18, 2023
Applicant:

Vibrant Microsystems Inc., Cupertino, CA (US);

Inventors:

Joseph Doll, Bend, OR (US);

Sanjay Bhandari, Cupertino, CA (US);

Assignee:

Vibrant Microsystems Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 31/00 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); H04R 7/04 (2006.01); H04R 19/02 (2006.01); H04R 19/04 (2006.01);
U.S. Cl.
CPC ...
H04R 31/006 (2013.01); B81B 7/0006 (2013.01); B81C 1/00246 (2013.01); H04R 7/04 (2013.01); H04R 19/02 (2013.01); H04R 19/04 (2013.01); H04R 31/003 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2207/015 (2013.01); B81B 2207/07 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0177 (2013.01); B81C 2203/036 (2013.01); B81C 2203/0728 (2013.01); H04R 2201/003 (2013.01);
Abstract

A MEMS audio device includes a first substrate having a first surface, a cavity, and a first vent hole formed through the first substrate, a device layer disposed upon the first substrate comprising a semiconductor material sandwiched between a first and second oxides, wherein a portion of the semiconductor material is substantially free of oxide, wherein the first oxide is disposed against the first surface, and wherein the device layer comprises first contacts, a substrate disposed upon the device layer, including a first vent hole formed through the second substrate, and second electrical contacts coupled to the first electrical contacts, wherein the portion of the semiconductor material forms a diaphragm for the MEMS audio device and wherein the diaphragm is configured to move within the first cavity.


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