The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Aug. 01, 2024
Jmem Technology Co., Ltd., Taipei, TW;
Yu-Chen Lo, Taipei, TW;
Chun-Hao Liang, Taipei, TW;
Dong-Yu Wu, Taipei, TW;
Tsung-Han Lu, Taipei, TW;
Meng-Lin Wu, Taipei, TW;
JMEM TECHNOLOGY CO., LTD., Taipei, TW;
Abstract
A self-timed readout driver for a leakage-based physical unclonable function (L-PUF) device, a L-PUF array using the same, and applications thereof are provided. The self-timed readout driver includes a precharge transistor, an inverter and a leaky device. The precharge transistor has a control end, a first end and a second end. The inverter is electrically connected to the second end of the precharge transistor. The leaky device having a control end electrically connected to ground, a first end electrically connected to the second end of the precharge transistor, and a second end electrically connected to ground. The control end of the precharge transistor is configured to receive an input signal. The inverter is configured to generate a sense enable (SE) signal. The input signal and the SE signal may be used as two input signals for the L-PUF device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile