The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

May. 25, 2024
Applicant:

Blue Origin Manufacturing, Llc, Huntsville, AL (US);

Inventors:

Arash Nejadpak, Everett, WA (US);

Jacob Hoxsey Fenton, Gilbert, AZ (US);

Assignee:

Blue Origin Manufacturing, LLC, Huntsville, AL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/082 (2006.01); H03K 17/14 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); H03K 17/145 (2013.01); H03K 2217/0027 (2013.01); H03K 2217/0081 (2013.01);
Abstract

Electrical circuits and methods for protecting a semiconductor switch in response to detecting a short-circuit condition of the semiconductor switch are presented. An electrical circuit includes a latch-reset portion that disables or enables the semiconductor switch by connecting or disconnecting, respectively, a gate of the semiconductor switch to a source of the semiconductor switch. The circuit also includes a power source portion that is energized by a voltage pulse that drives the gate of the semiconductor switch. The power source portion provides voltage and current to other parts of the circuit so that no external voltage source is needed to operate the circuit. The semiconductor switch may be a silicon carbide MOSFET, which may have a threshold voltage that changes with temperature and age. The circuit can account for such changes.


Find Patent Forward Citations

Quick Actions:

Nejadpak, Arash. (2026). Intrinsically powered, tunable, short-circuit detection and protection for silicon carbide field effect transistors (U.S. Patent No. 12640728). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12640728

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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