The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Aug. 14, 2023
Applicant:
Murata Manufacturing Co., Ltd., Nagaokakyo, JP;
Inventors:
Emre Ayranci, Costa Mesa, CA (US);
Miles Sanner, San Diego, CA (US);
Anoop Sheokand, Lake Forest, CA (US);
Mengsheng Rui, San Diego, CA (US);
Assignee:
MURATA MANUFACTURING CO., LTD., Nagaokakyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/16 (2006.01); H03F 1/56 (2006.01);
U.S. Cl.
CPC ...
H03F 3/16 (2013.01); H03F 1/565 (2013.01); H03F 2200/294 (2013.01); H03F 2200/372 (2013.01); H03F 2200/387 (2013.01);
Abstract
Split low noise amplifier (LNA) architectures providing an improved tradeoff between the noise figure (NF) and the output-to-output isolation are disclosed. The described LNAs include cascode transistors in two amplification paths and an inductive element including a pair of inductors and a common inductor. The inductance values of the inductors and the common inductor can be selected to obtain an improved tradeoff between the NF and isolation while meeting the output matching conditions.